Haifeng Sun Person-Info 

( Ich bin Haifeng Sun)

News

Fast Transistors Could Save Energy

phys.org
Gate electrode of an AlInN/GaN HEMT (High Electron Mobility Transistor). (Photo: Haifeng Sun)

Semiconductor Today

www.semiconductor-today.com
... based in Switzerland have enhanced the high-frequency performance of nitride-based high-electron-mobility transistors (HEMTs) grown on silicon substrates [Haifeng Sun et
Dossier exportieren
+1