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Lateral Power Transistors in Integrated Circuits - Tobias Erlbacher -...
books.google.pl
professionals. The author acknowledges the support from Heinz Mitlehner who
committed himself to numerous discussions and also arranged for the review of
this textbook. Fabrication and analysis of trench gate devices was assisted by
Gudrun ...
Full text of "DTIC ADA : International Semiconductor ...Internet Archive
archive.org
... Heinz Mitlehner, and Reinhard Helbig. IEEE Transactions on Electron Devices Vol 41: , R.Mickevicius and J.H.Zhao. Journal of Applied ...
EPE Association: EPE DS2b: New Materials and Active Devices
www.epe-association.org
... Heinz MITLEHNER, Tobias ERLBACHER, Anton BAUER, Lothar FREY : Abstract: In this study, the electrical performance of a bipolar switch (BiFET ) fabricated ...
Modeling and Switching Simulation Tool of SiC-GTOUiTM Institutional Repository
ir.uitm.edu.my
von MS Jadin · — [2] Martin Ruff, Heinz Mitlehner, and Reinhard Helbig,. “SiC Devices: Physic and Numerical Simulation”,. IEEE Transactions On Electron Devices, 1994,. Vol
SiC devices: physics and numerical simulation - PDFSLIDE.NET
pdfslide.net
1040 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 41, NO. 6, JUNE Sic Devices: Physics and Numerical Simulation Martin Ruff, Heinz Mitlehner, ... › Documents
Tính toán mô phỏng quá trình trao đổi năng lượng của ...
123docz.net
— US 8,436,361 B2, Martin Ruff, Heinz Mitlehner, and Reinhard Helbig, "SiC devices: physics and numerical simulation", ... › ... › Kỹ thuật
Charge Controlled Silicon Carbide Switching Devices
link.springer.com
von P Friedrichs url] www. siced. de · · Zitiert von: 13 — ... in charge of the MOSFET developments at SiCED, and Dr. Heinz Mitlehner for the contribution to the bipolar power switching development. › article
Charge Controlled Silicon Carbide Switching DevicesSpringer
link.springer.com
von P Friedrichs url] www. siced. de · · Zitiert von: 14 — Heinz Mitlehner for the contribution to the bipolar power switching development. Additionally, special thanks goes to the SiCED staff for ...
Charge Controlled Silicon Carbide Switching Devices | SpringerLinklink.springer.com › article › PROC-815-J3
link.springer.com
· ... is in charge of the MOSFET developments at SiCED, and Dr. Heinz Mitlehner for the contribution to the bipolar power switching development.
3D Analysis of Thermal and Electrical Performance of Wide ...SPIE Digital Library
nanolithography.spiedigitallibrary.org
[19] Martin Ruff, Heinz Mitlehner, and Reinhard Helbig, "SiC devices: physics and numerical simulation," IEEE. Transactions on Electron Devices, vol. 41, no ...
An V triple implanted vertical 6H-SiC MOSFET - [PDF Document]
vdocuments.site
542 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 46, NO. 3, MARCH An V Triple Implanted Vertical 6H–SiC MOSFET Dethard Peters, Reinhold Scho¨rner,...
Current Developments in High-Power Thyristors (1994) | H. Mitlehner |...
typeset.io
One way of increasing the reliability of thyristor valves is to reduce the number of devices required for a high blocking voltage. An essential precondition...
SiC devices: physics and numerical simulation - Semantic ...
www.semanticscholar.org
— @article{Ruff1994SiCDP, title={SiC devices: physics and numerical simulation}, author={Martin Ruff and Heinz Mitlehner and Reinhard Helbig}, — ... a 4H-SiC RESURF n-LDMOS Transistor for High Voltage Integrated Circuits}, author={J. Wei{\ss}e and Heinz Mitlehner and Lothar Frey and ... › ...
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