Toshiyuki Ohno und Hitachi Research Laboratory - Info zur Person

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Recent progress in SiC-based device processing - [PDF Document]

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Recent Progress in SiC-Based Device Processing Toshiyuki Ohno Hitachi Research Laboratory, Hitachi, Ltd., Hitachi, Japan SUMMARY Silicon carbide (SiC) has ...

Anisotropy of the Proximity Effect Between a High-Tc Superconductor...

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Yoko Kanke (3); Masahiro Kasai (3); Toshiyuki Ohno (3); Yuzoo Kozono (3). Author Affiliations. 3. Hitachi Research Laboratory, Hitachi, Ltd., Hitachi, Ibaraki, ...

Anisotropy of the Proximity Effect Between a High-T c ...

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von Y Kanke · — Hitachi Research Laboratory, Hitachi, Ltd., Hitachi, IbarakiJapan. Yoko Kanke, Masahiro Kasai, Toshiyuki Ohno & Yuzoo Kozono. Authors. Yoko Kanke. › chapter

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Toshiyuki Ohno und Hitachi Research Laboratory Person-Info

Recent progress in SiC-based device processing - [PDF Document]

Anisotropy of the Proximity Effect Between a High-Tc Superconductor...

Anisotropy of the Proximity Effect Between a High-T c ...