Chao Liu und University Person-Info 

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Gallium nitride HEMT-LED without metal interconnection

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Hong Kong University of Science and Technology (HKUST) has produced indium gallium nitride (InGaN) light-emitting diodes directly connected with aluminium gallium nitride (AlGaN) barrier high-electron-mobility transistors (HEMTs) [Chao Liu et al, Appl. Phys. Lett., vol106, p , 2015].
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