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Fabrication and stress relief modelling of GaN based MEMS ...oa.upm.es › eprint › contents
oa.upm.es
Guillen, C. Pietzka, M. Kunze, I. Daumiller, A. Dadgar,. A. Krost, and E. Kohn, IEEE Electron Dev. Lett. 27, (2006). B. P. van Drieenhuizen, J. F. L. Goosen, ...
Bücher
Gallium Nitride Electronics - Rüdiger Quay - Google Books
books.google.es
Gallium Nitride Electronics covers developments in III-N semiconductor-based electronics with a focus on high-power and high-speed RF applications. Material...
III-Nitride Semiconductors and Their Modern Devices - Google Books
books.google.es
A. Dadgar, F. Schulze, J. Bläsing, A. Diez, A. Krost, M. Neuburger, E. Kohn, I. Daumiller, and M. Kunze, Applied Physics Letters 85, (2004). A. Dadgar, M.
III–V Compound Semiconductors: Integration with Silicon-Based...
books.google.es
Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations...
Physics of Semiconductor Devices - Google Books
books.google.es
... Electronics Letters, 35 (1999), [2] I. Daumiller, C. Kirchner, M. Kamp, K. J. Ebeling, E. Kohn, “Evaluation of the Temperature Stability of AlGaN/GaN ...
Dokumente zum Namen
[ ] Decoupling of epitaxy related trapping effects in...
arxiv.org
... trapping effects in AlGaN/GaN metal-insulator semiconductor high electron mobility transistors. Authors:M. Huber, G. Pozzovivo, I. Daumiller, ...
Optical energies of AlInN epilayers - E-Prints Complutenseeprints.ucm.es › ...
eprints.ucm.es
Kohn, I. Daumiller, and M. Kunze, Appl. Phys. Lett. 85, I. M. Watson, C. Liu, E. Gu, M. D. Dawson, P. R. Edwards, and R. W.. Martin ...
Wissenschaftliche Veröffentlichungen
High temperature, high voltage operation of diamond Schottky diode -...
www.sciencedirect.com
A. Vescan *, I. Daumiller, P. Gluche, W. Ebert, E. Kohn. Department of Electron Devices and Circuits. University ~" UIm Uhn. Germany. Received 23 June ...
Veröffentlichungen allgemein
Donor-Like Surface Traps on Two-Dimensional Electron Gas and Current...
www.hindawi.com
View at: Publisher Site | Google Scholar; E. Kohn, I. Daumiller, M. Kunze et al., “Transient characteristics of GaN-based heterostructure field-effect transistors,” ...
Incorporation of dielectric layers into the processing of...
link.springer.com
Dielectric layers within III-nitride transistor technology can act either as passivation layers or as gate-dielectric layers. In this paper, we reflect on
Artikel & Meinungen
Academic library - free online college e textbooks
ebrary.net
[25] F. Schulze, O. Kisel, A. Dadgar, A. Krtschil, J. Blasing, M. Kunze, I. Daumiller, T. Hempel, A. Diez, R. Clos, J. Christen, and A. Krost, Journal of Crystal Growth ...
Sonstiges
Growth of AlGaN Film on Si (111) Substrate | MATEC Web of Conferences
www.matec-conferences.org
MATEC Web of Conferences, open access proceedings in Materials science, Engineering and Chemistry
High temperature, high voltage operation of diamond Schottky diode
www.infona.pl
Very high temperature operation of homoepitaxial diamond Schottky diodes is demonstrated with rectifying behaviour up to 800°C. The Schottky material is p...
InGaN-Channel FETs – Growth, Technology and Characteristics | MRS...
www.cambridge.org
InGaN-Channel FETs – Growth, Technology and Characteristics - Volume 680
MOVPE growth of GaN on Si(1 1 1) substrates — Arizona State...
asu.pure.elsevier.com
Armin Dadgar, M. Poschenrieder, J. Bläsing, O. Contreras, F. Bertram, T. Riemann, A. Reiher, M. Kunze, I. Daumiller, A. Krtschil, A. Diez, A. Kaluza, A. Modlich, ...
Investigation of Trap States in AlInN/AlN/GaN Heterostructures by...
ouci.dntb.gov.ua
https://doi.org ; A. Dadgar, F. Schulze, J. Bläsing, A. Diez, A. Krost, M. Neuburger, E. Kohn, I. Daumiller, and M. Kunze, Appl. Phys. Lett.
P. Volpe, J. Pernot, P. Muret, and F. Omnès, High hole mobility ...hal.archives-ouvertes.fr › html_ref...
hal.archives-ouvertes.fr
A. Vescan, I. Daumiller, P. Gluche, W. Ebert, and E. Kohn, High temperature, high voltage operation of diamond Schottky diode, Diamond and Related Materials, ...
Publications: The Interdisciplinary Center for Wide Bandgap...
nitrides.mrl.ucsb.edu
"Current instabilities in GaN-based devices" I. Daumiller, D. Theron, C. Gaquiere, A. Vescan, R. Dietrich, A. Wieszt, H. Leier, R. Vetury, U. K. ...
IET Digital Library: Short-channel AlGaN/GaN HEMTs with 70 nm T-gate
digital-library.theiet.org
Author(s): O. Breitschädel 1 ; H. Gräbeldinger 1 ; B. Kuhn 1 ; F. Scholz 1 ; W. Walthes 2 ; M. Berroth 2 ; I. Daumiller 3 ; K.B. Schad 3 ; E. Kohn 3 ; H. Schweizer 1.
T. Zimmermann, M. Neuburger, P. Benkart, F. Hernandez ...www.sciepub.com › reference
www.sciepub.com
Science and Education Publishing, publisher of open access journals in the scientific, technical and medical fields. Read full text articles or submit your...
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