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SST Review : Copper/Low-k - PennWellnewsletters.pennnet.com › sstreview
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Hartmut Ruelke, Peter Huebler, Christof Streck, Advanced Micro Devices; Meggy Gotuaco, Applied Materials Inc.; Wolfgang Senninger, Applied Materials GmbH
Netzwerk-Profile
LinkedIn: Hartmut Rülke | LinkedIn
Hartmut Rülkes berufliches Profil anzeigen LinkedIn ist das weltweit größte berufliche Netzwerk, das Fach- und Führungskräften wie Hartmut Rülke dabei hilft, ...
Hartmut Rülke | Semantic Scholar
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M. Kiene Hartmut Rülke Christof Streck Verfahren mit: Bilden eines Metallgebiets (203) in einer uber einem Substrat ausgebildeten dielektrischen Schicht (202); Bilden einer dielektrischen Barrierenschicht (205) auf dem Metallgebiet; …
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Interessen
Globalfoundries Inc patent inventors (2012)
stks.freshpatents.com
Hans-juergen Thees · Hans-jürgen Engelmann · Harry J. Levinson · Hartmut Ruelke · Heike Scholtz · Heinz-juergen Voss · Hemant Adhikari · Hirohisa Kawasaki.
Inventors on Globalfoundries Inc patents (2014) - FreshPatents.comstks.freshpatents.com › Globalfoundries-Inc-invento...
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Hartmut Ruelke · Hendrik Richter · Hendrik Thomas Mau · Henke Dietmar · Hidekazu Yoshida · Holm Geisler · Hong Yu · Hongliang Shen.
Ausbildung
Investigation of CH 4 , NH 3 , H 2 and He plasma treatment ...Scholars Portal Journals
journals.scholarsportal.info
Hartmut Ruelke · Ulrich Mayer · Johann W Bartha. Source Information. August 2010, Volume57(Issue8)Pages, p.1865To IEEE Transactions on Electron Devices ... Hartmut Ruelke · Ulrich Mayer · Johann W Bartha. Source Information. August 2010, Volume57(Issue8)Pages, p.1865To IEEE Transactions on Electron Devices ...
A review on the properties of cellulose fibre insulation | Scholars ...journals.scholarsportal.info › details › 170_arotpocfi
journals.scholarsportal.info
Authors. Christoph Kubasch · Christoph Klaus · Hartmut Ruelke · Ulrich Mayer · Johann W Bartha. Source Information. August 2010, Volume57(Issue8)Pages, ...
Bücher
D. Harmon | IBM | 2 Publications | 133 Citations | Related AuthorsAI Chat for scientific PDFs
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... Hartmut Ruelke, J. Klais, Michael Raab, D. Greenlaw, N. Kepler - Show less +75 more • Institutions (1). IBM Dec TL;DR: In this paper, a high Hartmut Ruelke, J. Klais, Michael Raab, D. Greenlaw, N. Kepler - Show less +75 more • Institutions (1). IBM Dec TL;DR: In this paper, a high ...
Hartmut Rülke | LinkedIn
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View Hartmut Rülke's professional profile on LinkedIn. LinkedIn is the world's largest business network, helping professionals like Hartmut Rülke discover inside ...
Official Gazette of the United States Patent and Trademark ...google.com
books.google.com
... Hartmut Ruelke ; Joerg Hohage , both of Dresden , Germany , and Lothar Mergili , Radebeul , Germany , assignors to Advanced Micro Devices , Inc. , Sunnyvale ...
USPTO Image File Wrapper Petition Decisions 0146google.com
books.google.com
... Hartmut Ruelke , et al . Application No ,910 Filed : June 16 , Commissioner for PaTENTS UNITED STATES Patent and Trademark Office P.O. BOX ...
Musik
Full text of "USPTO Patents Application " - Internet Archivearchive.org › gov.uspto.patents.application
archive.org
, Hartmut Ruelke TITLE OF INVENTION: NITROGEN-ENRICHED LOW-K BARRIER LAYER FOR A COPPER METALLIZATION LAYER 1 APPLN.
Dokumente zum Namen
book-summary.pdfMcGraw-Hill Education - Access Engineering
www.accessengineeringlibrary.com
D. President, CTO. Micell Technologies. Raleigh, NC. Hartmut Ruelke. AMD Fellow. Advanced Micro Devices. Dresden, Germany. BOARD OF REVIEWERS. Larry Shive, Ph.D ... D. President, CTO. Micell Technologies. Raleigh, NC. Hartmut Ruelke. AMD Fellow. Advanced Micro Devices. Dresden, Germany. BOARD OF REVIEWERS. Larry Shive, Ph.D ...
(PDF) [IEEE IEEE International Conference on IC Design ...dokumen.tips › Documents
dokumen.tips
... Berthold Reimer, Thorsten Kammler, Horst Lendzian, and Hartmut Ruelke. REFERENCES [1] F. Grtsch, New Material Challenges in 32nm Gate First High.
BOARD OF REVIEWERS | McGraw-Hill Educationwww.accessengineeringlibrary.com › binary › mheaeworks › board-o...
www.accessengineeringlibrary.com
Hartmut Ruelke. AMD Fellow. Advanced Micro Devices. Dresden, Germany. Larry Shive, Ph.D. MEMC Electronic Materials. St. Louis, MO. Robert J. Small, Ph. D.
[IEEE 13th Annual IEEE/SEMI Advanced Semiconductor Manufacturing...
vdocuments.site
Manufacturing Implementation of Low-k Dielectrics for Copper Damascene Technology Hartmut Ruelke, Christof Strtxk, Joerg Hohage, Advanced Micro Devices A m...
Wissenschaftliche Veröffentlichungen
Water uptake of a low-κ dielectric filmScienceDirect.com
www.sciencedirect.com
von C Kubasch · · Zitiert von: 4 — The authors like to acknowledge the work of Andreas Jahn and Heidrun Hiemann from the IHM, TU Dresden, Dresden, Germany and Hartmut Ruelke and Ulrich Mayer ... von C Kubasch · · Zitiert von: 4 — The authors like to acknowledge the work of Andreas Jahn and Heidrun Hiemann from the IHM, TU Dresden, Dresden, Germany and Hartmut Ruelke and Ulrich Mayer ...
Industriepartner- Symposium 2009
www.et.tu-dresden.de
Hartmut Rülke, Globalfoundries, Dresden . 10:45 . New Materials for Novel Devices Prof. Thomas Mikolajick, NaMLab, Dresden . 11:15 . Mixed-Signal Design in CMOS ...
Veröffentlichungen allgemein
A two-step UV curing process for producing high tensile ...Springer
link.springer.com
von T Fischer · · Zitiert von: 2 — Joerg Hohage, Hartmut Ruelke & Ralf Richter. Fraunhofer ENAS, Technologie Campus 3Chemnitz, Germany. Stefan E. Schulz & T. Gessner. von T Fischer · · Zitiert von: 2 — Joerg Hohage, Hartmut Ruelke & Ralf Richter. Fraunhofer ENAS, Technologie Campus 3Chemnitz, Germany. Stefan E. Schulz & T. Gessner.
A two-step UV curing process for producing high tensile stressed...
link.springer.com
Joerg Hohage, Hartmut Ruelke & Ralf Richter. Fraunhofer ENAS, Technologie Campus 3Chemnitz, Germany. Stefan E. Schulz & T. Gessner. Authors. › article
Sonstiges
Semiconductor structure having a silicon oxynitride ARC layer ...Google Patents
patents.google.com
Hartmut Ruelke: Martin Mazur: Minh Ngo; Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no ... Hartmut Ruelke: Martin Mazur: Minh Ngo; Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no ...
US B2 - Nitrogen-enriched low-k barrier layer for a ...Google
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... Hartmut Ruelke Barrier layer for a copper metallization layer including a low k dielectric. Family To Family Citations. * Cited by examiner, † Cited by third Hartmut Ruelke Barrier layer for a copper metallization layer including a low k dielectric. Family To Family Citations. * Cited by examiner, † Cited by third ...
Copper damascene with low-k capping layer and improved ...Московский инновационный кластер
i.moscow
Номер патента: US МПК H01L Авторы: Minh van Ngo, Jeremy I. Martin, Hartmut Ruelke ... ADVANCED MICRO DEVICES INC ADVANCED MICRO DEVICES, INC. Номер патента: US МПК H01L Авторы: Minh van Ngo, Jeremy I. Martin, Hartmut Ruelke ... ADVANCED MICRO DEVICES INC ADVANCED MICRO DEVICES, INC.
Dual stress liner for high performance sub-45nm gate ...Semantic Scholar
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... Hartmut Ruelke and J. Klais and Peter Huebler and Scott Luning and Ralf van Bentum and Gunter Grasshoff and Christoph Schwan and Edward E. Ehrichs and Scott Hartmut Ruelke and J. Klais and Peter Huebler and Scott Luning and Ralf van Bentum and Gunter Grasshoff and Christoph Schwan and Edward E. Ehrichs and Scott ...
Implementation of CVD low-k dielectrics for high-volume ...Gale
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von H Ruelke · · Zitiert von: 18 — Gale Academic OneFile includes Implementation of CVD low-k dielectrics for high-volume by Hartmut Ruelke, Peter Huebler, Christof. Click to explore. von H Ruelke · · Zitiert von: 18 — Gale Academic OneFile includes Implementation of CVD low-k dielectrics for high-volume by Hartmut Ruelke, Peter Huebler, Christof. Click to explore.
Investigation of Argon Plasma Damage on Ultra Low- DielectricsAcademia.edu
www.academia.edu
by Hartmut Ruelke , ECS Journal of Solid State Science and Technology. See Full PDF Download PDF. Free Related PDFs. The effects of plasma exposure on low ... by Hartmut Ruelke , ECS Journal of Solid State Science and Technology. See Full PDF Download PDF. Free Related PDFs. The effects of plasma exposure on low ...
Low-k dielectric | Publications | Citations | Top AuthorsAI Chat for scientific PDFs
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Barrier layer for a copper metallization layer including a low-k dielectric · Hartmut Ruelke, Joerg Hohage, Thomas Werner, Massud Aminpur. 30 Mar TL;DR ... Barrier layer for a copper metallization layer including a low-k dielectric · Hartmut Ruelke, Joerg Hohage, Thomas Werner, Massud Aminpur. 30 Mar TL;DR ...
Study of Electromigration in Integrated Circuits at Design ...repositorio.unicamp.
repositorio.unicamp.br
von RO Nunes — [97] Minh Van Ngo, Hartmut Ruelke, Joerg Hohage, and Lothar Mergili. Method of forming capped copper interconnects with reduced hillocks, April US ... von RO Nunes — [97] Minh Van Ngo, Hartmut Ruelke, Joerg Hohage, and Lothar Mergili. Method of forming capped copper interconnects with reduced hillocks, April US ...
Technique for forming a dielectric interlayer above a structure ...USPTO .report
uspto.report
This patent grant is currently assigned to GLOBALFOUNDRIES Inc.. The grantee listed for this patent is Kai Frohberg, Hartmut Ruelke, Christof Streck. Invention ... This patent grant is currently assigned to GLOBALFOUNDRIES Inc.. The grantee listed for this patent is Kai Frohberg, Hartmut Ruelke, Christof Streck. Invention ...
Ultra-low-k porous SiCOH dielectric degradation process ...Academia.edu
www.academia.edu
by Hartmut Ruelke , th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits. See Full PDF Download PDF. Free ... by Hartmut Ruelke , th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits. See Full PDF Download PDF. Free ...
[특허]Method and apparatus for depositing an etch stop layer사이언스온
scienceon.kisti.re.kr
Sey-Ping Sun ; Homi Nariman ; Hartmut Ruelke DE, Method of forming silicon oxynitride films. 상세보기. Chen, David; Goto, Haruhiro Harry; Martina, Martina ... Sey-Ping Sun ; Homi Nariman ; Hartmut Ruelke DE, Method of forming silicon oxynitride films. 상세보기. Chen, David; Goto, Haruhiro Harry; Martina, Martina ...
专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDBIPRDB
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Christian Zistl , Jörg Hohage , Hartmut Rülke , Peter Hübler; 发明人： Christian Zistl , Jörg Hohage , Hartmut Rülke , Peter Hübler; IPC分类号： H01L2144; CPC ... Christian Zistl , Jörg Hohage , Hartmut Rülke , Peter Hübler; 发明人： Christian Zistl , Jörg Hohage , Hartmut Rülke , Peter Hübler; IPC分类号： H01L2144; CPC ...
Highly efficient remote clean process for process chambers in ...Google
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Inventor: Christof Streck: Hartmut Ruelke: Joerg Hohage; Current Assignee. The listed assignees may be inaccurate. Google has not performed a legal analysis ... › pate...
DE D1 - Eine kupfer-verbindungsstruktur mit verbesserter ...patents.google.com › patent
patents.google.com
Other languages: German: English; Inventor: Minh Van Ngo: Hartmut Ruelke: Lothar Mergili: Joerg Hohage: Lu You: Robert A Huertas: Richard Huang ...
Method of forming copper interconnect capping layers with ...Google
patents.google.com
Other languages: English; Inventor: Joerg Hohage: Richard Huang: Robert A. Huertas: Lothar Mergili: Minh Van Ngo: Hartmut Ruelke: Lu You; Current Assignee. › patent
Hartmut Ruelke - Entity | RPX Insight
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Hartmut Ruelke has 0 patent litigation cases (0 cases currently active) - 0 patents asserted - 0 cases as a plaintiff - 0 cases as a defendant.
A two-step UV curing process for producing high tensile stressed...
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A two-step UV curing process for producing high tensile stressed silicon nitride layers - Volume 1455
WO A3 - Method of forming copper interconnect capping layers...
patents.google.com
Other languages: English: French; Inventor: Minh Van Ngo: Hartmut Ruelke: Lothar Mergili: Joerg Hohage: Lu You: Robert A Huertas: Richard Huang ...
Surface treatment and capping layer process for producing a copper ...www.google.com.gi › patents
www.google.com.gi
Inventor: Hartmut Ruelke: Joerg Hohage: Minh Van Ngo; Current Assignee. The listed assignees may be inaccurate. Google has not performed a legal analysis ...
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