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Semiconductor structure having a silicon oxynitride ARC ...Google Patents
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Hartmut Ruelke: Martin Mazur: Minh Ngo; Current Assignee. The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no ... Hartmut Ruelke: Martin Mazur: Minh Ngo; Current Assignee. The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no ...
US B2 - Nitrogen-enriched low-k barrier layer for a ...Google
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... Hartmut Ruelke Barrier layer for a copper metallization layer including a low k dielectric. Family To Family Citations. * Cited by examiner, † Cited by third Hartmut Ruelke Barrier layer for a copper metallization layer including a low k dielectric. Family To Family Citations. * Cited by examiner, † Cited by third ...
Amit MaratheVeriPages
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Hartmut Ruelke - Wilschdorf, DE. Assignee: Advanced Micro Devices, Inc. - Sunnyvale CA. International Classification: H01L US Classification: Hartmut Ruelke - Wilschdorf, DE. Assignee: Advanced Micro Devices, Inc. - Sunnyvale CA. International Classification: H01L US Classification:
Dual stress liner for high performance sub-45nm gate ...Semantic Scholar
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... Hartmut Ruelke and J. Klais and Peter Huebler and Scott Luning and Ralf van Bentum and Gunter Grasshoff and Christoph Schwan and Edward E. Ehrichs and Scott Hartmut Ruelke and J. Klais and Peter Huebler and Scott Luning and Ralf van Bentum and Gunter Grasshoff and Christoph Schwan and Edward E. Ehrichs and Scott ...
Copper damascene with low-k capping layer and improved ...Московский инновационный кластер
i.moscow
Номер патента: US МПК H01L Авторы: Minh van Ngo, Jeremy I. Martin, Hartmut Ruelke ... ADVANCED MICRO DEVICES INC ADVANCED MICRO DEVICES, INC. Номер патента: US МПК H01L Авторы: Minh van Ngo, Jeremy I. Martin, Hartmut Ruelke ... ADVANCED MICRO DEVICES INC ADVANCED MICRO DEVICES, INC.
Implementation of CVD low-k dielectrics for high-volume ...Gale
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von H Ruelke · · Zitiert von: 18 — Gale Academic OneFile includes Implementation of CVD low-k dielectrics for high-volume by Hartmut Ruelke, Peter Huebler, Christof. Click to explore. von H Ruelke · · Zitiert von: 18 — Gale Academic OneFile includes Implementation of CVD low-k dielectrics for high-volume by Hartmut Ruelke, Peter Huebler, Christof. Click to explore.
Investigation of Argon Plasma Damage on Ultra Low- DielectricsAcademia.edu
www.academia.edu
by Hartmut Ruelke , ECS Journal of Solid State Science and Technology. See Full PDF Download PDF. Free Related PDFs. The effects of plasma exposure on low ... by Hartmut Ruelke , ECS Journal of Solid State Science and Technology. See Full PDF Download PDF. Free Related PDFs. The effects of plasma exposure on low ...
[특허]Method and apparatus for depositing an etch stop layer사이언스온
scienceon.kisti.re.kr
Sey-Ping Sun ; Homi Nariman ; Hartmut Ruelke DE, Method of forming silicon oxynitride films. 상세보기. Chen, David; Goto, Haruhiro Harry; Martina, Martina ... Sey-Ping Sun ; Homi Nariman ; Hartmut Ruelke DE, Method of forming silicon oxynitride films. 상세보기. Chen, David; Goto, Haruhiro Harry; Martina, Martina ...
Low-k dielectric | Publications | Citations | Top AuthorsAI Chat for scientific PDFs
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Barrier layer for a copper metallization layer including a low-k dielectric · Hartmut Ruelke, Joerg Hohage, Thomas Werner, Massud Aminpur. 30 Mar TL;DR ... Barrier layer for a copper metallization layer including a low-k dielectric · Hartmut Ruelke, Joerg Hohage, Thomas Werner, Massud Aminpur. 30 Mar TL;DR ...
Enhanced adhesion of PECVD carbon on dielectric ...USPTO .report
uspto.report
— This patent grant is currently assigned to GLOBALFOUNDRIES Inc.. The grantee listed for this patent is Volker Jaschke, Hartmut Ruelke. Invention — This patent grant is currently assigned to GLOBALFOUNDRIES Inc.. The grantee listed for this patent is Volker Jaschke, Hartmut Ruelke. Invention ...
Study of Electromigration in Integrated Circuits at Design ...repositorio.unicamp.
repositorio.unicamp.br
von RO Nunes — [97] Minh Van Ngo, Hartmut Ruelke, Joerg Hohage, and Lothar Mergili. Method of forming capped copper interconnects with reduced hillocks, April US ... von RO Nunes — [97] Minh Van Ngo, Hartmut Ruelke, Joerg Hohage, and Lothar Mergili. Method of forming capped copper interconnects with reduced hillocks, April US ...
Technique for forming a dielectric interlayer above a structure ...USPTO .report
uspto.report
This patent grant is currently assigned to GLOBALFOUNDRIES Inc.. The grantee listed for this patent is Kai Frohberg, Hartmut Ruelke, Christof Streck. Invention ... This patent grant is currently assigned to GLOBALFOUNDRIES Inc.. The grantee listed for this patent is Kai Frohberg, Hartmut Ruelke, Christof Streck. Invention ...
Ultra-low-k porous SiCOH dielectric degradation process ...Academia.edu
www.academia.edu
by Hartmut Ruelke , th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits. See Full PDF Download PDF. Free ... by Hartmut Ruelke , th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits. See Full PDF Download PDF. Free ...
专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDBIPRDB
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Christian Zistl , Jörg Hohage , Hartmut Rülke , Peter Hübler; 发明人： Christian Zistl , Jörg Hohage , Hartmut Rülke , Peter Hübler; IPC分类号： H01L2144; CPC ... Christian Zistl , Jörg Hohage , Hartmut Rülke , Peter Hübler; 发明人： Christian Zistl , Jörg Hohage , Hartmut Rülke , Peter Hübler; IPC分类号： H01L2144; CPC ...
Highly efficient remote clean process for process chambers in ...Google
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Inventor: Christof Streck: Hartmut Ruelke: Joerg Hohage; Current Assignee. The listed assignees may be inaccurate. Google has not performed a legal analysis ... › pate...
DE D1 - Eine kupfer-verbindungsstruktur mit verbesserter ...patents.google.com › patent
patents.google.com
Other languages: German: English; Inventor: Minh Van Ngo: Hartmut Ruelke: Lothar Mergili: Joerg Hohage: Lu You: Robert A Huertas: Richard Huang ...
Method of forming copper interconnect capping layers with ...Google
patents.google.com
Other languages: English; Inventor: Joerg Hohage: Richard Huang: Robert A. Huertas: Lothar Mergili: Minh Van Ngo: Hartmut Ruelke: Lu You; Current Assignee. › patent
Hartmut Ruelke - Entity | RPX Insight
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Hartmut Ruelke has 0 patent litigation cases (0 cases currently active) - 0 patents asserted - 0 cases as a plaintiff - 0 cases as a defendant.
A two-step UV curing process for producing high tensile stressed...
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A two-step UV curing process for producing high tensile stressed silicon nitride layers - Volume 1455
WO A3 - Method of forming copper interconnect capping layers...
patents.google.com
Other languages: English: French; Inventor: Minh Van Ngo: Hartmut Ruelke: Lothar Mergili: Joerg Hohage: Lu You: Robert A Huertas: Richard Huang ...
Surface treatment and capping layer process for producing a copper ...www.google.com.gi › patents
www.google.com.gi
Inventor: Hartmut Ruelke: Joerg Hohage: Minh Van Ngo; Current Assignee. The listed assignees may be inaccurate. Google has not performed a legal analysis ...
Implementation of CVD low-k dielectrics for high-volume production -...
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Gale Academic OneFile includes Implementation of CVD low-k dielectrics for high-volume by Hartmut Ruelke, Peter Huebler, Christof. Click to explore.
COMPRESSIVE STRESS TRANSFER IN AN INTERLAYER DIELECTRIC OF A...
www.patentsencyclopedia.com
· Inventors: Joerg Hohage (Dresden, DE) Hartmut Ruelke (Dresden, DE) Ralf Richter (Radebeul, DE) Ralf Richter (Radebeul, DE) Assignees: ...
Benjamin Meyer email address & phone number | University of ...RocketReach
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Berlin, Berlin, Germany. View. 1. dlr.de. University of Geneva Employee Hartmut Rülke's profile photo · Hartmut Rülke. Fellow. Dresden, SN, DE. › benjamin...
Detection of Water in Low-k Dielectric Films - eufanet - PDFHALL.COM
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Monitoring the change of the amount of water in the dielectric over time. Sample stack â Using the infrared reflection...
Detection of Water in Low-k - PDF Free Download
sciencedocbox.com
KG, Dresden, Germany Hartmut Ruelke and Ulrich Mayer Unterstützt durch die Sächsische Aufbaubank Slide 20 of Slide 21 of References C.
Leakage Current and Breakthrough Measurements on Moisturized ...Semantic Scholar
www.semanticscholar.org
... title={Leakage Current and Breakthrough Measurements on Moisturized SiCOH}, author={Christoph Kubasch and Hartmut Ruelke and Ulrich Mayer and Johann W. › ...
Extending dual stress liner process to high performance 32nm node ...oa.mg › work › soi
oa.mg
... Rolf Stephan, K. Wieczorek, Matthias Schaller, Heike Salz, Jörg Hohage, Hartmut Ruelke, J. Klais, P. Huebler, Scott Luning, R. van Bentum, G. Grasshoff, ...
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