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Development of world's first vertical gallium oxide transistor...
phys.org
A group at NICT led by Masataka Higashiwaki has pioneered the use of Si as an n-type dopant in Ga2O3 devices, but the community has long ...
First vertical gallium oxide power MOSFET developed ...
www.eenewspower.com
A group at NICT led by Masataka Higashiwaki has used silicon as an n-type dopant in Ga2O3 devices, but the community has long struggled to ...
Gallium oxide as replacement for silicon in lower-cost, smaller...
www.semiconductor-today.com
Masataka Higashiwaki and Gregg Jessen at the US Air Force Research Laboratory (AFRL) have outlined a case for producing microelectronics ...
Physics Colloquium: "Reduction of Symmetry and the Return of the War...
calendar.mines.edu
[2] Masataka Higashiwaki and Gregg H. Jesson, Appl. Phys. Lett. GAO2018, (2018). [3] M. Schubert et al., Phys. Rev. B 99, (R) ...
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